Encrypted login | home

Program Information

The Physics of Interface Effects for Radiation Treatments in a MRI-Linac: A Monte Carlo Study


S Ahmad

S Ahmad1*, A Sarfehnia1,2 , A Kim1,2 , M Wronski1,2 , A Sahgal1,2 , B Keller1,2 , (1) Sunnybrook Odette Cancer Center, Toronto, Canada, (2) University of Toronto, Department of Radiation Oncology, Toronto, Canada

Presentations

TH-AB-BRA-10 (Thursday, August 4, 2016) 7:30 AM - 9:30 AM Room: Ballroom A


Purpose:
To investigate and explain the interface effects for clinically relevant materials being irradiated in the presence of a 1.5 T transverse magnetic field.

Methods:
Interface effects were investigated using Geant4.10.1 both with (B-On) and without (B-Off) a magnetic field for an Elekta MRI-Linac. A slab of thickness 8 cm, representing inhomogeneity, was placed at a depth of 4 cm in a 20x20x20 cm water phantom. Backscattered electron fluence was calculated through a 20x20 cm plane aligned with the surface of the inhomogeneity. Inhomogeneities investigated were lung, bone, aluminum, titanium, stainless steel, and dental filling. A photon beam with field size of 2x2 cm at the isocenter and SAD of 143.5 cm was generated from a point source with energy distribution sampled from a histogram representing the true Elekta MRI-Linac photon spectrum.

Results:
In the B-On case, if the heterogeneity is a low Zeff material, such as lung, the backscattered electron fluence is increased considerably, i.e. by 54 %, and the corresponding dose is expected to be higher near the interface compared to the B-Off case. On the contrary, if the heterogeneity is a high Zeff material then the backscattered electron fluence is reduced in the B-On case. This reduction leads to a lower dose deposition at the interface compared to the B-Off case.

Conclusion:
The reduction in dose at the interface, in the B-On case, is directly related to the reduction in backscattered electron fluence. The reduction in backscattered electron fluence occurs due to two different reasons. First, the electron energy spectrum hitting the interface is changed for the B-On case which changes the electron scattering probability. Second, some electrons that are looping under the influence of the magnetic field are captured by the higher density side of the interface and no longer contribute to the backscattered electron stream.

Funding Support, Disclosures, and Conflict of Interest: Funding support for this study was provided by ElektaTM.


Contact Email: